Mosfet 20n60
600V,20A N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 20A RDS(ON) (at VGS=10V) MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 20N60 is universally applied in motor control.
December 2008 TMSuperFETFCB20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS (on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.
This is one of the MOSFET types. This is a kind of the transistor.
Part Number : 20N60
Function : 600V, MOSFET
Package : TO-247, TO-3P Type
Manufacturers : Unisonic Technologies
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Description :
The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
20N60 Pinout
20n60s5 Mosfet Datasheet
Absolute Maximum Ratings (Tc = 25°C)
1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 20 A
4. Drain power dissipation : PD = 370 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications
Mosfet 20n6003
1. Motor control
2. UPS
3. DC choppers and switch-mode
4. Resonant-mode power supplies
Mosfet 20n60a
20N60 Datasheet